Crystal orientation of epitaxial oxide film on silicon substrate

Direct growth of oxide films on silicon is usually difficult because extensive diffusion or chemical reaction between (Si) and materials. Schlom et. al. comprehensively investigate the thermodynamic stability binary oxides. However does not include factors for epitaxial such as lattice mismatch crystallographic arrangement deposited surface. A magnesium (MgO) was taken an example materials absorption energy estimated MgO placed Si surface predicted crystal orientation to be cubic [MgO(001) // Si(001) MgO(100) Si(100)]. These results agreed with experimental observed The evaluation adsorption can guideline